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S9015 General Transistor

Product Detailed

Related Categories:Transistors

S9015 General purpose application. Switching application. Excellent hFE linearity. Complementary pair with S9014

FEATURES

Excellent HFE Linearity HFE hFE(0.1mA)/ hFE(2mA)=0.95(Typ.)

Low Noise NF=1dB(Typ.),10db(Max.).

Complementary to GM9014(S9014)

MAXIMUM RATINGS (Ta=25)

CHARACTERISTIC	Symbol	Rating	Unit
Collector-Base Voltage	VCBO	-50	Vdc
Collector-Emitter Voltage	VCEO	-45	Vdc
Emitter-Base Voltage	VEBO	-5.0	Vdc
Collector Current-Continuous	Ic	-150	mAdc
Base Current	IB	-30	mAdc
Collector Power Dissipation	PC	225	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55~150

DEVICE MARKING

GM9015(S9015)=M6

ELECTRICAL CHARACTERISTICS

TA=25 unless otherwise noted

Characteristic	Symbol	Test Condition	Min	Typ	Max	Unit
Collector Cutoff Current	ICBO	VCB=-50V,IE=0	—	—	-0.1	μA
Emitter Cutoff Current	IEBO	VEB=-5V,IC=0	—	—	-0.1	μA
Collector-Base Breakdown Voltage	V(BR)CBO	IC=-100μA	-50	—	—	V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC=-1.0mA	-45	—	—	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=-100μA	-5	—	—	V
DC Current Gain	hFE	VCE=-6V,IC=-2mA	200	—	700	—
Collector-Emitter Saturation Voltage	VCE(sat)	IC=-100mA, IB=-5mA	—	—	-0.6	V
Base-Emitter Voltage	VBE	VCE=-5.0V,IC=-10mA	—	—	-0.82	V
Transition Frequency	fT	VCE=-5.0V,IC=-10mA	100	180	—	MHz
Collector Output Capacitance	Cob	VCB=-10V,IE=0, f=1MHz	—	4.0	7.0	pF